STP4NK60Z STMicroelectronics, STP4NK60Z Datasheet - Page 18

• Manufacturer Part Number: STP4NK60Z
• Description: MOSFET N-CH 600V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3191-5

Packaging mechanical data
18/20
DIM.
A0
B0
B1
D1
K0
P0
P1
P2
W
D
E
R
F
TAPE MECHANICAL DATA
All dimensions are in millimeters
MIN.
10.4
1.65
2.55
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
DPAK FOOTPRINT
mm
MAX.
10.6
12.1
1.85
2.75
16.3
1.6
7.6
4.1
8.1
2.1
7
0.267 0.275
0.409 0.417
0.059 0.063
0.059
0.065 0.073
0.291 0.299
0.100 0.108
0.153 0.161
0.075 0.082
1.574
0.311 0.319
0.618
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
0.476
0.641
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
DIM.
C
D
G
N
A
B
T
BASE QTY
REEL MECHANICAL DATA
2500
MIN.
12.8
20.2
16.4
1.5
50
mm
MAX.
13.2
18.4
22.4
330
BULK QTY
0.059
0.504 0.520
0.795
0.645 0.724
1.968
MIN.
2500
inch
12.992
MAX.
0.881