STD3NK100Z STMicroelectronics, STD3NK100Z Datasheet - Page 4
![MOSFET N-CH 1000V 2.5A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD3NK100Z
Manufacturer Part Number
STD3NK100Z
Description
MOSFET N-CH 1000V 2.5A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STD3NK100Z.pdf
(16 pages)
Specifications of STD3NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 1.25A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
601pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
90000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
5.4ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7967-2
STD3NK100Z
STD3NK100Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD3NK100Z
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
V
CASE
oss eq.
(BR)DSS
g
I
C
I
DS(on)
increases from 0 to 80% V
GS(th)
C
C
Q
Q
DSS
GSS
R
Pulsed: pulse duration = 300µs, duty cycle 1.5%
fs
Q
oss
oss eq.
rss
iss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
(2)
is defined as constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Dynamic
On/off
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
I
V
V
V
V
V
f=1 MHz, open drain
V
V
V
V
V
(see Figure 17)
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
= 1mA, V
= V
= 10V, I
=800V, I
= Max rating,
= Max rating,Tc=125°C
= ± 20V
=15V, I
=25V, f=1 MHz, V
=0V, V
=10V
Test conditions
Test conditions
GS
STF3NK100Z - STP3NK100Z - STD3NK100Z
, I
DS
D
D
GS
D
D
= 1.25A
= 1.25A
= 50µA
=0V to 800V
= 2.5A
= 0
GS
=0
1000
Min.
Min.
3
Typ.
Typ.
3.75
601
2.4
8.6
3.6
9.2
5.4
53
12
15
18
oss
when V
Max. Unit
Max. Unit
±
4.5
50
10
1
6
DS
pF
pF
pF
pF
nC
nC
nC
µA
µA
µA
S
Ω
V
V
Ω