IRLZ34NPBF International Rectifier, IRLZ34NPBF Datasheet - Page 5

• Manufacturer Part Number: IRLZ34NPBF
• Description: MOSFET N-CH 55V 30A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 5V
• Input Capacitance (ciss) @ Vds: 880pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 30 A
• Gate Charge, Total: 25 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.035 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8.9 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 27 A
• Mounting Style: Through Hole
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLZ34NPBF

0.01
0.1
40
30
20
10
10
0.00001
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
J
≤ 0.1 %
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
0.1