STP5NK52ZD STMicroelectronics, STP5NK52ZD Datasheet - Page 7

• Manufacturer Part Number: STP5NK52ZD
• Description: MOSFET N-CH 520V 4.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK52ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 520V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 529pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 520 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5953-5

STB5NK52ZD-1, STD/F/P5NK52ZD
Figure 8.
Figure 10. Normalized B
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Output characteristics
VDSS
vs temperature
Figure 9.
Figure 11. Static drain-source on resistance
Transfer characteristics
Electrical characteristics
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