IRFZ34NPBF International Rectifier, IRFZ34NPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ34NPBF
• Description: MOSFET N-CH 55V 29A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 29A
• Power Dissipation: 68W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Current, Drain: 29 A
• Gate Charge, Total: 34 nC
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.04 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 31 ns
• Time, Turn-on Delay: 7 ns
• Transconductance, Forward: 6.5 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Mounting Style: Through Hole
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ34NPBF

Electrical Characteristics @ T
IRFZ34NPbF
Source-Drain Ratings and Characteristics
Notes:
I
I
V
t
Q
t
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
L
L
S
SM
on
DSS
d(on)
r
d(off)
f
rr
GSS
fs
S
(BR)DSS
GS(th)
D
SD
DS(ON)
iss
oss
rss
2
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by
V
R
max. junction temperature. ( See fig. 11 )
DD
G
= 25Ω, I
= 25V, starting T
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
Internal Drain Inductance
AS
= 16A. (See Figure 12)
J
= 25°C, L = 410µH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
T
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
–––
–––
–––
–––
––– 0.052 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
6.5
–––
55
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 175°C
≤ 16 A, di/dt ≤ 420A/µs, V
–––
–––
–––
–––
–––
–––
–––
–––
–––
700
240
100
–––
130
––– 0.040
––– -100
7.5
–––
–––
7.0
4.5
49
31
40
57
–––
200
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
100
4.0
6.8
1.6
25
34
14
29
86
V/°C
nA
nH
µA
ns
nC
nC
pF
ns
A
Ω
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
= 16A
= 16A
= 25°C, I
= 25°C, I
= 1.8Ω, See Fig. 10
= 18Ω
= 10V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 10V, See Fig. 6 and 13
= 28V
= 0V
= 25V
= 0V, I
= 20V
= -20V
≤ V
GS
(BR)DSS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
= 16A
Conditions
= 16A, V
= 250µA
= 16A
= 16A
,
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
G
= 150°C
= 0V
G
S
+L
D
S
S
D
D
)