IRF6620TR1PBF International Rectifier, IRF6620TR1PBF Datasheet

IRF6620TR1PBF

Manufacturer Part Number

IRF6620TR1PBF

Description

MOSFET N-CH 20V 27A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6620TR1PBF.pdf (9 pages)

Specifications of IRF6620TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.7 mOhm @ 27A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

27A

Vgs(th) (max) @ Id

2.45V @ 250µA

Gate Charge (qg) @ Vgs

42nC @ 4.5V

Input Capacitance (ciss) @ Vds

4130pF @ 10V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6620TR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6620TR1PBF

Manufacturer:

Quantity:

2 465

Current page: 1 of 9
Download datasheet (233Kb)

Description

The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu-

larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Notes through Š are on page 2

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

θJA

θJC

θJ-PCB

RoHS Compliant

Lead-Free (Qualified up to 260°C Reflow)

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

@ T

= 25°C

= 70°C

= 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Ãg

Parameter

@ 10V

Ãh

20V

DSS

DirectFET™ Power MOSFET ‚

Typ.

3.6mΩ@V

12.5

–––

2.7mΩ@V

1.0

-40 to + 150

DS(on)

Max.

0.017

150

220

±20

1.8

2.8

IRF6620TRPbF

max

IRF6620PbF

Max.

= 4.5V

–––

= 10V

1.4

DirectFET™ ISOMETRIC

packaging to achieve

Qg(typ.)

28nC

Units

W/°C

°C/W

°C

5/11/06

Related parts for IRF6620TR1PBF

IRF6620TR1PBF Summary of contents

Page 1

RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 150°C 10 25°C 1 ...

Page 4

150°C 10.0 1 25°C 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 150 120 100 ...

Page 5

125° 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V GS 0.01 Ω t ...

Page 6

D.U.T + ƒ • • - • + ‚ - R • • • • Fig 16. DirectFET™ Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 7

DirectFET™ Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking www.irf.com DIMENSIONS IMPERIAL METRIC MIN ...

Page 8

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6620TRPBF). For 1000 parts on 7" reel, order IRF6620TR1PBF CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 REEL DIMENSIONS ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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