STL150N3LLH5 STMicroelectronics, STL150N3LLH5 Datasheet - Page 3

• Manufacturer Part Number: STL150N3LLH5
• Description: MOSFET N-CH 30V 35A POWERFLAT6X5
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL150N3LLH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.75 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.00175 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 150 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.55V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8483-2

STL150N3LLH5
1
Electrical ratings
Table 2.
1. The value is rated according R
2. The value is rated according R
3. Pulse width limited by safe operating area
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4.
R
Symbol
P
P
Symbol
R
Symbol
I
thj-pcb
I
I
TOT
TOT
DM
V
I
I
thj-case
V
T
D
D
D
D
E
T
I
GS
DS
stg
AV
(1)
(2)
AS
(1)
(3)
J
(3)
(1)
(3)
(1)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Thermal resistance junction-case (drain) (steady state)
Thermal resistance junction-ambient
Not-repetitive avalanche current,
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
thj-c
thj-pcb
Doc ID 14092 Rev 4
C
C
D
Parameter
= 25 °C
= 25 °C
Parameter
Parameter
GS
= I
AV
= 0)
, V
C
C
C
C
=100 °C
DD
= 25 °C
= 100 °C
= 25 °C
= 24 V)
-55 to 150
Value
Value
Value
± 22
21.8
0.03
150
140
1.56
31.3
300
30
94
35
80
17
4
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
Unit
°C
mJ
W
W
V
V
A
A
A
A
A
A
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