STP60NF06 STMicroelectronics, STP60NF06 Datasheet

MOSFET N-CH 60V 60A TO-220

STP60NF06

Manufacturer Part Number
STP60NF06
Description
MOSFET N-CH 60V 60A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP60NF06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
73nC @ 10V
Input Capacitance (ciss) @ Vds
1660pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
60A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2779-5

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General features
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
March 2007
Order code
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching application
STP60NF06
Type
Part number
STP60NF06
V
60V
DSS
<0.016Ω
R
DS(on)
P60NF06
Marking
N-channel 60V - 0.014Ω - 60A TO-220
60A
I
D
Rev 6
Internal schematic diagram
STripFET II™ Power MOSFET
Package
TO-220
TO-220
STP60NF06
1
2
3
Packaging
Tube
www.st.com
1/12
12

Related parts for STP60NF06

STP60NF06 Summary of contents

Page 1

... Applications ■ Switching application Order code Part number STP60NF06 March 2007 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET R I DS(on) D <0.016Ω 60A Internal schematic diagram Marking P60NF06 Rev 6 STP60NF06 TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STP60NF06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STP60NF06 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuos Drain current (continuos (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Storage temperature stg T Max. operating junction temperature j 1 ...

Page 4

... 4.7Ω (see Figure 11) Min. Typ =125° 250µ 30A 0.014 0.016 D Min. Typ. I =30A 50 D 1660 400 140 54 = 60A Min. Typ. = 30A 10V 30A =10V GS 20 STP60NF06 Max. Unit V 1 µA 10 µA ±100 Ω Max. Unit Max. Unit ...

Page 5

... STP60NF06 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Source-drain diode forward characteristics 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STP60NF06 ...

Page 7

... STP60NF06 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuit Figure 11. Switching times test circuit for resistive load Figure 13. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped inductive waveform 8/12 Figure 12. Gate charge test circuit Figure 14. Unclamped Inductive load test circuit Figure 16. Switching time waveform STP60NF06 ...

Page 9

... STP60NF06 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STP60NF06 inch Min Typ Max 0.173 0.181 0.024 0.034 0.044 0.066 0.019 0.027 0.6 0.62 0.050 0.393 0.409 0.094 0.106 0.194 0.202 0.048 ...

Page 11

... STP60NF06 5 Revision history Table 8. Revision history Date 09-Sep-2004 17-Aug-2006 04-Oct-2006 02-Mar-2007 Revision 3 Complete version 4 The document has been reformatted 5 Changes in Dynamic 6 Safe operating area Revision history Changes has been updated 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP60NF06 ...

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