IRLI540NPBF International Rectifier, IRLI540NPBF Datasheet - Page 5

• Manufacturer Part Number: IRLI540NPBF
• Description: MOSFET N-CH 100V 23A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLI540NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 54W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 63 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 42 W
• Mounting Style: Through Hole
• Gate Charge Qg: 49.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLI540NPBF

0.01
0.1
10
25
20
15
10
0.00001
1
5
0
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
75
0.0001
SINGLE PULSE
100
125
0.001
t , Rectangular Pulse Duration (sec)
°
1
150
175
0.01
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
t
r
J
≤ 0.1 %
≤ 1
DM
x Z
1
thJC
P
2
DM
1
t
d(off)
+ T
C
t
1
t
f
t
2
+
-
10