STP60NF06L STMicroelectronics, STP60NF06L Datasheet - Page 7

• Manufacturer Part Number: STP60NF06L
• Description: MOSFET N-CH 60V 60A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP60NF06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 60 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5895-5; STP60NF06L

STB60NF06L - STP60NF06L - STP60NF06LFP
Figure 7.
Figure 9.
Figure 11. Normalized gate threshold voltage
Transconductance
Gate charge vs gate-source voltage Figure 10. Capacitance variations
vs temperature
Figure 8.
Figure 12. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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