STP3N62K3 STMicroelectronics, STP3N62K3 Datasheet - Page 16
STP3N62K3
Manufacturer Part Number
STP3N62K3
Description
MOSFET N-CH 620V 2.7A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP3N62K3.pdf
(20 pages)
Specifications of STP3N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
385pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.5 Ohm @ 10 V
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.7 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8449-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP3N62K3
Manufacturer:
STMicroelectronics
Quantity:
1 995
Company:
Part Number:
STP3N62K3
Manufacturer:
TOSHIBA
Quantity:
3 000
Package mechanical data
16/20
Dim
A1
D1
E1
V2
b2
e1
L1
L2
c2
J1
A
D
E
H
R
b
e
L
c
STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
Doc ID 14894 Rev 2
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
0.016
inch
Typ
0.1
0.009
0.067
0.053
0.208
0.106
0.069
0.181
0.037
0.024
0.368
0.409
0.624
0.110
0.055
Max
8°