IRF630NLPBF International Rectifier, IRF630NLPBF Datasheet - Page 3
![MOSFET N-CH 200V 9.3A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF630NLPBF
Manufacturer Part Number
IRF630NLPBF
Description
MOSFET N-CH 200V 9.3A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF630NPBF.pdf
(11 pages)
Specifications of IRF630NLPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 25V
Power - Max
82W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9.5 A
Power Dissipation
82 W
Mounting Style
Through Hole
Gate Charge Qg
23.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF630NLPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF630NLPBF
Manufacturer:
CREE
Quantity:
10 000
www.irf.com
0.01
100
100
0.1
10
0.1
10
1
1
0.1
4.0
TOP
BOTTOM
T = 175 C
J
V
DS
5.0
V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
°
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
6.0
1
°
7.0
20µs PULSE WIDTH
T = 25 C
J
V
20µs PULSE WIDTH
DS
10
8.0
4.5V
= 50V
°
9.0
100
10.0
100
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
9.3A
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
IRF630N/S/LPbF
20µs PULSE WIDTH
T = 175 C
J
10
4.5V
°
V
GS
°
=
10V
3
100