IRFB4212PBF International Rectifier, IRFB4212PBF Datasheet - Page 8

• Manufacturer Part Number: IRFB4212PBF
• Description: MOSFET N-CH 100V 18A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRFB4212PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 50V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 18 A
• Gate Charge, Total: 15 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 60 W
• Resistance, Drain To Source On: 58 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 7.7 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Mounting Style: Through Hole
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/