IRFU4615PBF International Rectifier, IRFU4615PBF Datasheet - Page 5

• Manufacturer Part Number: IRFU4615PBF
• Description: MOSFET N-CH 150V 33A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU4615PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 144 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Maximum Avalanche Energy vs. Temperature
120
100
80
60
40
20
0
25
0.001
100
0.01
0.1
10
0.1
1.0E-06
10
1
1E-006
Starting T J , Junction Temperature (°C)
1
50
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
TOP
BOTTOM 1.0% Duty Cycle
I D = 21A
75
D = 0.50
Duty Cycle = Single Pulse
0.02
0.01
0.05
0.10
0.10
0.05
0.20
0.01
100
1.0E-05
Single Pulse
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
t 1 , Rectangular Pulse Duration (sec)
175
1.0E-04
0.0001
τ
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
J
τ
J
τ
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
1
Ci= τi/Ri
av
av =
τ
thJC
D (ave)
1
Ci
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
i/Ri
R
1
= Average power dissipation per single avalanche pulse.
R
av
1
) = Transient thermal resistance, see Figures 13)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
1.0E-03
jmax
τ
2
0.001
τ
R
2
. This is validated for every part type.
2
R
2
P
D (ave)
R
τ
3
3
R
τ
3
3
= 1/2 ( 1.3·BV·I
I
E
av
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
AS (AR)
τ
R
4
= 2DT/ [1.3·BV·Z
τ
4
R
4
av
4
1.0E-02
τ
·f
C
τ
= P
Ri (°C/W)
0.01
0.02324
0.26212
0.50102
0.25880
D (ave)
av
) = DT/ Z
·t
th
av
]
0.000008
0.000106
0.001115
0.005407
τi (sec)
jmax
thJC
jmax
is not exceeded.
1.0E-01
(assumed as
0.1
5