STK822 STMicroelectronics, STK822 Datasheet - Page 3

MOSFET N-CH 25V 38A POLARPAK

STK822

Manufacturer Part Number
STK822
Description
MOSFET N-CH 25V 38A POLARPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STK822

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.15 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
6060pF @ 25V
Power - Max
5.2W
Mounting Type
Surface Mount
Package / Case
PolarPak®
Configuration
Single Quad Drain Quad Source Dual Gate
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.00215 Ohms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
38 A
Power Dissipation
5.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6325-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STK822
Manufacturer:
ST
0
STK822
1
Electrical ratings
Table 2.
1. Continuous mode
2. Guaranteed for test time
3. Pulse width limited by package
4. When mounted on FR-4 board of 1inch
5. Starting Tj = 25 °C, I
Table 3.
1. When mounted on FR-4 board of 1inch
2. Steady state
3.
R
Symbol
Symbol
P
R
R
V
thj-amb
E
V
I
Measured at Source pin when the device is mounted on FR-4 board in steady state
DM
I
I
TOT
thj-c
thj-c
V
GS
T
AS
GS
D
D
T
DS
stg
(4)
(4)
j
(2)
(3)
(5)
(1)
(2)
(3)
(4)
(1)
Absolute maximum ratings
Thermal data
Thermal resistance junction-amb
Thermal resistance junction-case (top drain)
Thermal resistance junction-case (source)
Drain-source voltage (V
Gate-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
D
= 19 A, V
15 ms
DD
Parameter
Parameter
A
= 25 V
= 25 °C
GS
2
2
, 2 oz Cu and ≤ 10 sec
, 2 oz Cu and ≤ 10 sec
= 0)
A
A
= 25 °C
= 100 °C
Typ.
0.8
2.2
20
-55 to 150
0.0416
Value
23.75
± 16
± 18
152
500
5.2
25
38
Electrical ratings
Max.
2.7
24
1
°C/W
°C/W
°C/W
W/°C
Unit
Unit
mJ
°C
W
V
V
V
A
A
A
3/15

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