STP11NK40Z STMicroelectronics, STP11NK40Z Datasheet - Page 3

• Manufacturer Part Number: STP11NK40Z
• Description: MOSFET N-CH 400V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP11NK40Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 5.8 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7500-5; STP11NK40Z

STB11NK40Z, STP11NK40ZFP, STP11NK40Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
V
Symbol
Symbol
R
dv/dt
ESD(G-S)
I
V
SD
R
P
thj-case
V
DM
V
V
T
DGR
T
I
I
TOT
thj-a
T
ISO
GS
DS
stg
D
D
≤ 9A, di/dt ≤ 200 A/µs, V
J
l
(2)
(3)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C= 100pF,
R= 1.5kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
DD
Parameter
Parameter
≤ V
(BR)DSS
Doc ID 8936 Rev 7
C
GS
= 25°C
GS
= 20KΩ)
, T
= 0)
j
≤ T
JMAX
C
C
=100°C
= 25°C
.
TO-220/D²PAK
TO-220/D²PAK
5.67
0.88
110
1.14
36
--
9
-55 to 150
Value
Value
3500
62.5
± 30
400
400
300
4.5
Electrical ratings
TO-220FP
TO-220FP
5.67
2500
36
0.24
9
4.2
30
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
V
V
3/17