IRF7403 International Rectifier, IRF7403 Datasheet - Page 4

• Manufacturer Part Number: IRF7403
• Description: MOSFET N-CH 30V 8.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7403

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7403

IRF7403
2 4 0 0
2 0 0 0
1 6 0 0
1 2 0 0
1 0 0
8 0 0
4 0 0
0 . 1
1 0
1
0
Fig 7. Typical Source-Drain Diode
0 . 0
1
T = 1 50 °C
J
Fig 5. Typical Capacitance Vs.
C
C
C
V
V
i ss
o ss
0 . 5
rs s
Drain-to-Source Voltage
S D
D S
Forward Voltage
V
C
C
C
, Source-to-Drain Voltage (V )
, Drain-to-Source V oltage (V)
G S
iss
rss
oss
1 . 0
= 0V,
= C
= C
= C
T = 25 °C
J
gs
gd
ds
+ C
+ C
1 . 5
1 0
gd
gd
f = 1M H z
, C
2 . 0
ds
SH O R TED
V
2 . 5
G S
= 0 V
1 0 0
3 . 0
A
A
100
10
2 0
1 6
1 2
1
8
4
0
Fig 8. Maximum Safe Operating Area
0.1
0
I
V
T
T
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
A
J
DS
= 4.0A
= 25 C
= 150 C
= 2 4V
OPERATION IN THIS AREA LIMITED
V
1 0
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC )
°
G
, Drain-to-Source Voltage (V)
2 0
1
BY R
3 0
DS(on)
FO R TES T C IR CU IT
SEE FIG U RE 12
4 0
10
5 0
100us
1ms
10ms
100
6 0
A