IRF1324STRLPBF International Rectifier, IRF1324STRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1324STRLPBF
• Description: MOSFET N-CH 24V 195A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1324STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 195A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 7590pF @ 24V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 340 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 160 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1324STRLPBFTR

Notes:

‚
ƒ
∆V
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
2
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
temperature.
Symbol
Symbol
Symbol
R
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 195A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.014mH
Ãd
Parameter
Parameter
g
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
„
…
†
‡
ˆ
‰
24
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
I
C
as C
C
mended footprint and soldering techniques refer to application note #AN-994.
SD
oss
oss
θ
oss
≤ 195A, di/dt ≤ 450A/µs, V
7590
3440
1960
4700
4490
–––
–––
–––
–––
–––
–––
–––
160
190
120
––– 350
–––
–––
160
430
1.3
2.3
7.7
eff. (TR) is a fixed capacitance that gives the same charging time
oss
22
84
49
76
17
83
46
71
eff. (ER) is a fixed capacitance that gives the same energy as
while V
while V
1420
1.65
-200
–––
––– mV/°C
250
200
–––
–––
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
DS
4.0
1.3
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
mΩ
µA
nA
nC
nC
pF
ns
ns
V
V
Ω
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0 MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 195A
= 195A, V
= 195A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
DD
= 2.7Ω
= V
= 24V, V
= 24V, V
= 10V, I
= 12V
= 24V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 16V
= 10V
= 0V
= 0V, V
= 0V, V
≤ V
GS
(BR)DSS
, I
D
g
g
D
S
DSS
DS
DS
D
D
DS
= 250µA
GS
GS
= 195A, V
= 250µA
= 195A
= 195A
DSS
= 0V to 19V
= 0V to 19V
, T
.
=0V, V
Conditions
Conditions
Conditions
= 0V
= 0V, T
J
.
V
I
di/dt = 100A/µs
F
≤ 175°C.
R
= 195A
D
= 20V,
g
GS
= 5.0mA
J
GS
= 125°C
= 10V
= 0V
i
h
, See Fig. 11
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d
g
G
g
D
S