IRF7821 International Rectifier, IRF7821 Datasheet - Page 5

• Manufacturer Part Number: IRF7821
• Description: MOSFET N-CH 30V 13.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7821

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1010pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7821

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0.01
100
0.1
10
14
12
10
Fig 9. Maximum Drain Current Vs.
1
1E-006
8
6
4
2
0
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
25
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T J , Junction Temperature (°C)
50
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
t 1 , Rectangular Pulse Duration (sec)
125
0.001
150
0.01
Fig 10. Threshold Voltage Vs. Temperature
2.6
2.2
1.8
1.4
1.0
-75
-50
0.1
-25
T J , Temperature ( °C )
0
1
25
50
75
I D = 250µA
10
100
125
5
150
100