IRF7811W International Rectifier, IRF7811W Datasheet - Page 2

• Manufacturer Part Number: IRF7811W
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7811W

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 5V
• Input Capacitance (ciss) @ Vds: 2335pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7811W; Q1057779

IRF7811W
Electrical Characteristics
www.irf.com
Source-Drain Rating & Characteristics
Notes:
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge„
Reverse Recovery
Charge (with Parallel
Schottky)„

‚
ƒ
„
…
measured at V
Typical values of R
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
gs2
+ Q
gd
)
GS
= 5.0V, I
DS
oss
(on) measured at V
C
BV
V
t
C
C
R
I
I
Q
Q
Q
Q
Q
t
t
V
Q
Q
R
t
Q
Q
d (on)
DSS
GSS
r
d (off)
f
GS(th)
rss
DS
iss
oss
SD
sw
oss
G
GS1
GS2
GD
G
G
rr
rr(s)
DSS
F
(on)
= 15A.
Min
Min
1.0
30
–
–
–
2335
16.3
10.1
Typ
400
119
Typ
9.0
3.5
1.2
8.8
2.0
9.9
GS
22
12
11
11
29
45
41
–
= 4.5V, Q
±100
Max
1.25
Max
150
4.0
12
30
33
–
–
–
–
G
, Q
Units
Units
SW
m
nC
µA
nA
pF
nC
nC
ns
Ω
V
V
V
Ω
and Q
OSS
V
V
V
V
V
V
V
V
V
V
V
Clamped Inductive Load
V
I
di/dt ~ 700A/µs
V
di/dt = 700A/µs
(with 10BQ040)
V
S
Conditions
Conditions
V
GS
GS
GS
DS
DS
DS
Tj = 100°C
GS
GS
DS
DS
DD
DS
DS
DS
= 15A‚, V
GS
=5.0V, I
= 16V, V
= 0V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 5V, V
= 16V, I
= 16V, I
= 5.0V
= 16V, V
= 16V, V
= 16V, V
= ±12V
GS
,I
D
D
DS
D
D
D
= 250µA
= 250µA
D
GS
GS
=15A, V
GS
GS
GS
GS
GS
< 100mV
= 15A, V
= 15A
= 15A‚
= 0
= 0
= 0,
= 0
= 0V, I
= 0V, I
= 0V
DS
S
S
GS
=16V
= 15A
= 15A
= 5.0V
2