IXTA200N055T2 IXYS, IXTA200N055T2 Datasheet - Page 4

MOSFET N-CH 55V 200A TO-263

IXTA200N055T2

Manufacturer Part Number
IXTA200N055T2
Description
MOSFET N-CH 55V 200A TO-263
Manufacturer
IXYS
Series
TrenchT2™r
Datasheet

Specifications of IXTA200N055T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
109nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0042 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0042
Ciss, Typ, (pf)
6970
Qg, Typ, (nc)
109
Trr, Typ, (ns)
49
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
280
240
200
160
120
1,000
200
180
160
140
120
100
80
40
80
60
40
20
100
0
0
0.4
3.0
0
0.5
f
3.5
= 1 MHz
5
Fig. 9. Forward Voltage Drop of
0.6
T
J
Fig. 7. Input Admittance
10
4.0
= 150ºC
Fig. 11. Capacitance
0.7
Intrinsic Diode
T
J
15
V
= 150ºC
GS
V
4.5
- 40ºC
0.8
V
SD
25ºC
DS
- Volts
- Volts
20
- Volts
0.9
5.0
T
J
25
= 25ºC
1.0
C oss
C iss
C rss
5.5
30
1.1
6.0
35
1.2
1.3
6.5
40
1,000
100
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
R
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
DS(
V
I
I
J
C
10
D
G
DS
20
= 175ºC
on
= 100A
= 10mA
= 25ºC
)
= 28V
Limit
20
40
Fig. 8. Transconductance
30
60
Fig. 10. Gate Charge
Q
40
G
80
I
- NanoCoulombs
D
V
- Amperes
DS
50
100
10
- Volts
60
IXTA200N055T2
IXTP200N055T2
120
70
140
T
J
80
= - 40ºC
150ºC
25ºC
160
90
180
100
25µs
100µs
1ms
10ms
100ms
200
110
100

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