IXTA130N10T7 IXYS, IXTA130N10T7 Datasheet - Page 2

• Manufacturer Part Number: IXTA130N10T7
• Description: MOSFET N-CH 100V 130A TO-263-7
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA130N10T7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 130 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.0091
• Ciss, Typ, (pf): 5080
• Qg, Typ, (nc): 104
• Trr, Typ, (ns): 67
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263 (7-lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. On through-hole packages, R
location must be 5mm or less from the package body
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Resistive Switching Times
V
R
I
-di/dt = 100A/μs
V
Test Conditions
V
V
V
Test Conditions
V
Repetitive, Pulse width limited by T
I
F
F
GS
R
G
DS
GS
GS
GS
= 25A, V
= 25A, V
= 50V
= 5Ω (External)
= 10V, V
= 0V, V
= 0V
= 10V, I
= 10V, V
GS
GS
DS
D
DS
= 0V
DS
= 0V, Note 1
= 60A, Note 1
= 25V, f = 1MHz
= 20V, I
= 0.5 • V
4,835,592
4,881,106
D
DSS
4,931,844
5,017,508
5,034,796
= 25A
DS(on)
, I
D
= 25
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
55
6,162,665
6,259,123 B1
6,306,728 B1
5080
Typ.
Typ.
160
635
104
4.7
67
93
95
30
29
44
28
30
47
Max.
Max.
0.42 °C/W
130
350
1.0
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 (7-lead) (IXTA..7) Outline
6,727,585
6,771,478 B2 7,071,537
IXTA130N10T7
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
7,005,734 B2
7,063,975 B2
7,157,338B2