STB14NM65N STMicroelectronics, STB14NM65N Datasheet - Page 17
![MOSFET N-CH 650V 12A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB14NM65N
Manufacturer Part Number
STB14NM65N
Description
MOSFET N-CH 650V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB14NM65N.pdf
(18 pages)
Specifications of STB14NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 50V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
12 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7000-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB14NM65N
Manufacturer:
STMicroelectronics
Quantity:
1 948
STB/F/I/P/W14NM65N
6
Revision history
Table 9.
15-Feb-2008
14-Oct-2008
Date
Document revision history
Revision
1
2
First release
Table 4: Avalanche characteristics
Changes
has been corrected.
Revision history
17/18