IRF2907ZSTRL7PP International Rectifier, IRF2907ZSTRL7PP Datasheet - Page 6

• Manufacturer Part Number: IRF2907ZSTRL7PP
• Description: MOSFET N-CH 75V 160A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2907ZSTRL7PP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 180A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF2907ZSTRL7PPTR

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
D.U.T
.3 F
0.01
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
700
600
500
400
300
200
100
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25 0
25
Starting T J , Junction Temperature (°C)
I D = 250µA
I D = 1.0mA
I D = 1.0A
50
vs. Drain Current
T J , Temperature ( °C )
75
25 50 75 100 125 150 175 200
100
TOP
BOTTOM 110A
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125
150
I D
24A
34A
175