IRF4905PBF International Rectifier, IRF4905PBF Datasheet - Page 2

• Manufacturer Part Number: IRF4905PBF
• Description: MOSFET P-CH 55V 74A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF4905PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 74A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: P
• Current, Drain: -74 A
• Gate Charge, Total: 180 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.02 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 74A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 74 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF4905PBF

IRF4905PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
I
I
V
t
Q
t
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
DSS
GSS
S
d(on)
f
SM
on
r
d(off)
rr
fs
S
D
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
R
(BR)DSS
max. junction temperature. ( See fig. 11 )
Starting T
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
= 25°C, L = 1.3mH
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
AS
= -38A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
Min. Typ. Max. Units
SD
-55
21
–––
–––
–––
–––
–––
–––
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ -38A, di/dt ≤ -270A/µs, V
-0.05 –––
3400 –––
1400 –––
–––
––– 0.02
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
640
–––
–––
–––
230
4.5
89
18
99
61
96
7.5
-4.0
–––
-260
-1.6
–––
–––
100
180
–––
–––
–––
–––
–––
–––
130
350
-25
32
86
-74
V/°C
µA
nA
ns
nH
nC
ns
nC
pF
V
Ω
V
A
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -38A
= -38A
= 25°C, I
= 25°C, I
DD
= 2.5Ω
= 0.72Ω, See Fig. 10
= V
= -25V, I
= -55V, V
= -44V, V
= -10V, See Fig. 6 and 13
= 0V, I
= -10V, I
= 20V
= -20V
= -44V
= 0V
= -25V
= -28V
≤ V
GS
(BR)DSS
, I
D
F
S
D
= -250µA
= -38A
D
D
Conditions
= -38A, V
GS
Conditions
= -250µA
GS
= -38A
= -38A
,
= 0V, T
= 0V
D
= -1mA
GS
G
J
= 0V
= 150°C
G
S
+L
D
S
D
)
S
D