STP10NK60Z STMicroelectronics, STP10NK60Z Datasheet - Page 10

• Manufacturer Part Number: STP10NK60Z
• Description: MOSFET N-CH 600V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP10NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• For Use With: 497-6416 - BOARD EVAL L5991/STP10NK60Z
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4117-5

Test circuits
3
10/19
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
STB10NK60Z, STP10NK60Z, STW10NK60Z
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD