STP10NK60Z STMicroelectronics, STP10NK60Z Datasheet - Page 10
![MOSFET N-CH 600V 10A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP10NK60Z
Manufacturer Part Number
STP10NK60Z
Description
MOSFET N-CH 600V 10A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB10NK60ZT4.pdf
(19 pages)
Specifications of STP10NK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1370pF @ 25V
Power - Max
115W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
750mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.75 Ohms
Forward Transconductance Gfs (max / Min)
7.8 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
For Use With
497-6416 - BOARD EVAL L5991/STP10NK60Z
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4117-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP10NK60Z
Manufacturer:
ST
Quantity:
12 500
Company:
Part Number:
STP10NK60ZFP
Manufacturer:
ST
Quantity:
70 000
Company:
Part Number:
STP10NK60ZFP
Manufacturer:
ST
Quantity:
450
Company:
Part Number:
STP10NK60ZFP
Manufacturer:
ST
Quantity:
12 000
Company:
Part Number:
STP10NK60ZFP
Manufacturer:
ST
Quantity:
86 755
Part Number:
STP10NK60ZFP
Manufacturer:
ST
Quantity:
20 000
Test circuits
3
10/19
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
STB10NK60Z, STP10NK60Z, STW10NK60Z
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD