IRFSL41N15DPBF International Rectifier, IRFSL41N15DPBF Datasheet

MOSFET N-CH 150V 41A TO-262

IRFSL41N15DPBF

Manufacturer Part Number
IRFSL41N15DPBF
Description
MOSFET N-CH 150V 41A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFSL41N15DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
41A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2520pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFSL41N15DPBF
l
l
l
l
l
www.irf.com
Applications
Notes  through
I
I
I
P
P
P
V
dv/dt
T
T
R
R
R
R
R
R
Benefits
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
D
D
D
GS
θJC
θJC
θcs
θJA
θJA
θJA
and Current
@ T
@ T
App. Note AN1001)
High frequency DC-DC converters
Lead-Free
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
@T
Effective C
C
C
A
C
C
= 25°C
= 100°C Continuous Drain Current, V
= 25°C
= 25°C Power Dissipation, TO-220
= 25°C Power Dissipation, Fullpak
OSS
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation, D
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Case, Fullpak
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, TO-220
Junction-to-Ambient, D
Junction-to-Ambient, Fullpak
to Simplify Design, (See
are on page 12
Parameter
Parameter
2
Pak
2
Pak
e
GS
GS
i
h
@ 10V
@ 10V
h
IRFB41N15D
TO-220AB
V
150V
DSS
Typ.
300 (1.6mm from case )
0.50
TO-220 FullPak
–––
–––
–––
–––
–––
IRFIB41N15D
R
-55 to + 175
HEXFET
DS(on)
1.1(10)
Max.
0.32
0.045
164
200
± 30
3.1
1.3
2.7
41
29
48
IRFIB41N15DPbF
IRFSL41N15DPbF
IRFB41N15DPbF
IRFS41N15DPbF
IRFS41N15D
Max.
max
0.75
3.14
®
–––
D
62
40
65
2
Power MOSFET
Pak
IRFSL41N15D
N•m (lbf•in)
TO-262
41A
Units
Units
W/°C
°C/W
V/ns
I
°C
W
A
V
D
08/10/06
1

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IRFSL41N15DPBF Summary of contents

Page 1

... Pak e 300 (1.6mm from case ) Typ. ––– ––– h 0.50 h ––– ––– Pak ––– IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF ® HEXFET Power MOSFET R max I DS(on) D 0.045 41A 2 D Pak TO-262 IRFS41N15D IRFSL41N15D Max. ...

Page 2

... IRFB/IRFIB/IRFS/IRFSL41N15DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient ––– (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Fig 1. Typical Output Characteristics 1000 100 ° 175 C J ° 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF 1000 TOP BOTTOM 100 10 ° 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 25V 0.0 -60 -40 -20 0 ...

Page 4

... IRFB/IRFIB/IRFS/IRFSL41N15DPbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 Fig 6. Typical Gate Charge Vs. ...

Page 5

... D = 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0.01 ...

Page 6

... IRFB/IRFIB/IRFS/IRFSL41N15DPbF D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1200 15V 1000 DRIVER 800 + 600 400 V 200 (BR)DSS 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy ...

Page 7

... D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt ...

Page 8

... IRFB/IRFIB/IRFS/IRFSL41N15DPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH Y6HQG ) UCDTÃDTÃ6IÃDSA  Ã ...

Page 9

... UCDTÃDTÃ6IÃDSAD'#BÃ DUCÃ6TT@H7G`Ã GPUÃ8P9@Ã"#"! 6TT@H7G@9ÃPIÃ Ã!#Ã ((( DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅFÅ Note: "P" in assembly line position indicates "Lead-Free" www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7 96U@Ã ...

Page 10

... IRFB/IRFIB/IRFS/IRFSL41N15DPbF UÃ 6UDP $" Ã Ã2 Ã 6U@ T Ã ÃP Q UDP I 6G GP UÃ ÃÃ2 Ã! Ã! 6Ã2 Ã G`ÃT DU@ Ã www.irf.com ...

Page 11

... TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information O R www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF 11 ...

Page 12

... IRFB/IRFIB/IRFS/IRFSL41N15DPbF 2 TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 1.5mH 25Ω 25A. ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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