STW20NK50Z STMicroelectronics, STW20NK50Z Datasheet - Page 12

• Manufacturer Part Number: STW20NK50Z
• Description: MOSFET N-CH 500V 17A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW20NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 17 A
• Gate Charge, Total: 85 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.23 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 70 ns
• Time, Turn-on Delay: 28 ns
• Transconductance, Forward: 13 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3261-5

Package mechanical data
12/18
Dim
A1
D1
E1
V2
b2
c2
e1
J1
L1
L2
A
D
E
H
R
b
e
L
c
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
Doc ID 9118 Rev 9
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
0.016
inch
Typ
0.1
STx20NK50Z
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.624
0.106
0.110
0.055
0.069
Max
8°