IXTQ450P2 IXYS, IXTQ450P2 Datasheet - Page 2

• Manufacturer Part Number: IXTQ450P2
• Description: MOSFET N-CH 500V 16A TO3P
• Manufacturer: IXYS
• Series: PolarP2™r
• Type: PolarP2 Power MOSFETr

Specifications of IXTQ450P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 330 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2530pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Product: MOSFET Gate Drivers
• Rise Time: 10 ns
• Fall Time: 9 ns
• Supply Current: 16 A
• Maximum Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 44 ns
• Maximum Turn-on Delay Time: 16 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 16 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 16
• Rds(on), Max, Tj=25°c, (?): 0.33
• Ciss, Typ, (pf): 2280
• Qg, Typ, (nc): 43
• Trr, Typ, (ns): 400
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
TO-220 (IXTP) Outline
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
V
TO-220
TO-3P & TO-247
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 16A, -di/dt = 100A/μs
= I
= 100V, V
= 10V, V
= 10Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
ADVANCE TECHNICAL INFORMATION
GS
1 - Gate
3 - Source
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
2 - Drain
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Characteristic Values
Min.
12
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2530
Typ.
0.50
0.25
257
400
20
44
25
16
10
43
16
12
9
0.42 °C/W
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
1.3
16
64
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTP450P2 IXTQ450P2
TO-247 (IXTH) Outline
TO-3P (IXTQ) Outline
6,727,585
6,771,478 B2 7,071,537
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
2
4.7
2.2
2.2
1.0
Millimeter
.4
3 - Source
3
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
Max.
e
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
IXTH450P2
.8
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
2 - Drain
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216