IXTQ200N075T IXYS, IXTQ200N075T Datasheet - Page 4
![MOSFET N-CH 75V 200A TO-3P](/photos/5/49/54997/ixtq200n075t_sml.jpg)
IXTQ200N075T
Manufacturer Part Number
IXTQ200N075T
Description
MOSFET N-CH 75V 200A TO-3P
Manufacturer
IXYS
Datasheet
1.IXTQ200N075T.pdf
(5 pages)
Specifications of IXTQ200N075T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
430W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
200 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
50
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
300
270
240
210
180
150
120
350
300
250
200
150
100
100
90
60
30
50
0
0
0.4
3
0
f = 1 MHz
0.5
3.5
5
Fig. 9. Forward Voltage Drop of
0.6
10
4
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.7
Intrinsic Diode
4.5
V
15
T
V
0.8
V
J
GS
SD
= 150ºC
DS
- Volts
- Volts
- Volts
0.9
20
5
C oss
C rss
C iss
1
5.5
T
25
T
J
J
= -40ºC
= 25ºC
150ºC
1.1
25ºC
30
6
1.2
6.5
35
1.3
1.4
40
7
1.00
0.10
0.01
160
140
120
100
10
80
60
40
20
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
D
G
DS
20
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
50
= 38V
0.001
Fig. 8. Transconductance
T
40
J
100
= - 40ºC
Q
Pulse W idth - Seconds
Fig. 10. Gate Charge
150ºC
G
25ºC
- NanoCoulombs
I
60
0.01
D
Impedance
- Amperes
150
80
IXTQ200N075T
200
0.1
100
250
120
1
300
140
10
160
350