STP200NF04 STMicroelectronics, STP200NF04 Datasheet - Page 6

• Manufacturer Part Number: STP200NF04
• Description: MOSFET N-CH 40V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200NF04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0037 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3524-5

STP200NF04 - STB200NF04 - STB200NF04-1
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Figure 15: Thermal Resistance Rthj-a vs PCB
Copper Area
Figure 16: Max Power Dissipation vs PCB Cop-
per Area