STB23NM60ND STMicroelectronics, STB23NM60ND Datasheet - Page 11

• Manufacturer Part Number: STB23NM60ND
• Description: MOSFET N-CH 600V 19.5A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB23NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 50V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8472-2

STB/I/F/P/W23NM60ND
Table 9.
Figure 24. TO-220FP drawing
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
A
B
D
E
F
H
TO-220FP mechanical data
A
B
H
Min.
0.45
0.75
1.15
1.15
4.95
28.6
15.9
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
Dia
Doc ID 14367 Rev 3
L6
L2
L7
L3
Typ.
mm
L5
16
F1
D
L4
F2
Package mechanical data
F
E
G1
Max.
2.75
1.70
1.70
10.4
30.6
10.6
16.4
4.6
2.7
0.7
5.2
2.7
3.6
9.3
3.2
1
7012510_Rev_K
G
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