STV250N55F3 STMicroelectronics, STV250N55F3 Datasheet - Page 5

MOSFET N-CH 55V 250A POWERSO-10

STV250N55F3

Manufacturer Part Number
STV250N55F3
Description
MOSFET N-CH 55V 250A POWERSO-10
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STV250N55F3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
250A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Transistor Polarity
N Channel
Continuous Drain Current Id
250A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0015ohm
Rds(on) Test Voltage Vgs
10V
Configuration
Single
Resistance Drain-source Rds (on)
1.5 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
250 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7030-2

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Part Number:
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STV250N55F3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
V
I
t
t
SD
I
d(on)
d(off)
SD
RRM
I
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Q
SD
t
t
t
rr
r
f
rr
(1)
(2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
V
Figure 18
V
R
Figure 13
V
R
Figure 13
SD
SD
DD
DD
DD
G
G
= 120 A, V
= 120 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 4.7 Ω, V
= 35 V, T
= 27.5 V, I
= 27.5 V, I
Test conditions
Test conditions
j
GS
GS
GS
= 150 °C
D
D
= 10 V,
= 10 V,
= 60 A
= 60 A
= 0
Electrical characteristics
Min.
Min.
Typ. Max. Unit
Typ.
150
110
110
3.5
60
25
50
1000
250
Max Unit
1.5
nC
ns
ns
ns
ns
ns
A
A
V
A
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