IRF1324LPBF International Rectifier, IRF1324LPBF Datasheet - Page 4

• Manufacturer Part Number: IRF1324LPBF
• Description: MOSFET N-CH 24V 195A TO262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1324LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 195A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 7590pF @ 24V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 340 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Gate Charge Qg: 160 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
100
350
300
250
200
150
100
1.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
50
0
Fig 11. Typical C
0.0
25
-5
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
V SD , Source-to-Drain Voltage (V)
0
V DS, Drain-to-Source Voltage (V)
T J = 175°C
50
T C , Case Temperature (°C)
0.5
Case Temperature
Forward Voltage
5
75
10
OSS
T J = 25°C
100
Limited By Package
Stored Energy
1.0
15
125
20
V GS = 0V
150
1.5
25
175
30
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1200
1000
100
800
600
400
200
10
32
30
28
26
24
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Limited by
package
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
10msec
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
1msec
DC
100µsec
100
10
TOP
BOTTOM 195A
125
150
I D
44A
83A
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100
175