IRF1324LPBF International Rectifier, IRF1324LPBF Datasheet - Page 4
![MOSFET N-CH 24V 195A TO262](/photos/5/32/53250/to-262_sml.jpg)
IRF1324LPBF
Manufacturer Part Number
IRF1324LPBF
Description
MOSFET N-CH 24V 195A TO262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF1324STRLPBF.pdf
(10 pages)
Specifications of IRF1324LPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.65 mOhm @ 195A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
195A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7590pF @ 24V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
340 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
4
1000
100
350
300
250
200
150
100
1.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
50
0
Fig 11. Typical C
0.0
25
-5
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
V SD , Source-to-Drain Voltage (V)
0
V DS, Drain-to-Source Voltage (V)
T J = 175°C
50
T C , Case Temperature (°C)
0.5
Case Temperature
Forward Voltage
5
75
10
OSS
T J = 25°C
100
Limited By Package
Stored Energy
1.0
15
125
20
V GS = 0V
150
1.5
25
175
30
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1200
1000
100
800
600
400
200
10
32
30
28
26
24
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Limited by
package
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
10msec
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
1msec
DC
100µsec
100
10
TOP
BOTTOM 195A
125
150
I D
44A
83A
www.irf.com
100
175