IXTA102N15T IXYS, IXTA102N15T Datasheet - Page 7

• Manufacturer Part Number: IXTA102N15T
• Description: MOSFET N-CH 150V 102A TO-263
• Manufacturer: IXYS

Specifications of IXTA102N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 102A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 455W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 102 A
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 5220
• Qg, Typ, (nc): 87
• Trr, Typ, (ns): 97
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
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Fig. 19. Maximum Transient Thermal Impedance
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Pulse Width - Seconds
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IXTP102N15T IXTQ102N15T
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IXYS REF: F_102N15T(6E)90-30-08
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