STB25NM60ND STMicroelectronics, STB25NM60ND Datasheet - Page 9
![MOSFET N-CH 600V 21A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB25NM60ND
Manufacturer Part Number
STB25NM60ND
Description
MOSFET N-CH 600V 21A D2PAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STB25NM60ND.pdf
(18 pages)
Specifications of STB25NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 50V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
21 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
40 ns
Rise Time
30 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8473-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STx25NM60ND
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
circuit
Test circuits
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