IXTA96P085T IXYS, IXTA96P085T Datasheet - Page 4

• Manufacturer Part Number: IXTA96P085T
• Description: MOSFET P-CH 85V 96A TO-263
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTA96P085T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 96A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 13100pF @ 25V
• Power - Max: 298W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -85
• Id(cont), Tc=25°c, (a): -96
• Rds(on), Max, Tj=25°c, (?): 0.013
• Ciss, Typ, (pf): 13100
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 55
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-140
-120
-100
-300
-250
-200
-150
-100
100
-80
-60
-40
-20
-50
0
0
-2.5
-0.2
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-0.4
-5
-3.0
-0.6
-10
-3.5
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
-0.8
= 125ºC
-15
-4.0
T
V
V
V
J
GS
SD
DS
= 125ºC
-1.0
- 40ºC
-20
- Volts
- Volts
- Volts
25ºC
-4.5
T
C iss
C oss
C rss
-1.2
-25
J
= 25ºC
-5.0
-1.4
-30
-5.5
-1.6
-35
-6.0
-1.8
-40
-
1,000
-
100
-
100
-10
-
10
80
60
40
20
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
0
0
-
1
0
0
R
DS(on)
V
I
I
T
T
Single Pulse
D
G
DS
J
C
= - 48A
= -1mA
20
= 150ºC
Limit
= 25ºC
= - 43V
-20
Fig. 12. Forward-Bias Safe Operating Area
IXTA96P085T IXTP96P085T
100ms
40
-40
Fig. 8. Transconductance
10ms
60
Fig. 10. Gate Charge
Q
G
-60
1ms
I
- NanoCoulombs
D
80
V
DS
- Amperes
DC
-
10
- Volts
100
-80
IXTH96P085T
100µs
T
120
J
= - 40ºC
-100
140
25ºC
125ºC
25µs
-120
160
-140
-
180
100