STP16N65M5 STMicroelectronics, STP16N65M5 Datasheet
STP16N65M5
Specifications of STP16N65M5
Available stocks
Related parts for STP16N65M5
STP16N65M5 Summary of contents
Page 1
... Description MDmesh™ revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies ...
Page 2
Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 3
STB16N65M5, STD16N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM ...
Page 4
Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...
Page 5
STB16N65M5, STD16N65M5 Table 6. Switching times Symbol t (v) Voltage delay time d t (v) Voltage rise time r t (i) Current fall time f t (off) Crossing time c Table 7. Source drain diode Symbol I Source-drain current SD ...
Page 6
Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK 0.1 Tj=150°C Tc=25°C Single pulse 0.01 10 0.1 1 Figure 4. Safe operating area for DPAK 0.1 ...
Page 7
STB16N65M5, STD16N65M5 Figure 8. Normalized B VDSS BV DSS (norm) 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 -50 - Figure 10. Output capacitance stored energy E oss (µ ...
Page 8
Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 0.60 - 8/16 Figure 15. Source-drain diode forward AM03184v1 V SD (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 T ...
Page 9
STB16N65M5, STD16N65M5 3 Test circuits Figure 16. Switching times test circuit for resistive load D.U. Figure 18. Test circuit for inductive load switching and diode recovery times ...
Page 10
Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...
Page 11
STB16N65M5, STD16N65M5 DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 ...
Page 12
Package mechanical data Dim 12/16 D2PAK (TO-263) mechanical data m m ...
Page 13
STB16N65M5, STD16N65M5 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...
Page 14
Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 ...
Page 15
STB16N65M5, STD16N65M5 6 Revision history Table 8. Document revision history Date 09-Nov-2010 Revision 1 First release. Doc ID 18146 Rev 1 Revision history Changes 15/16 ...
Page 16
... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...