STW12NK90Z STMicroelectronics, STW12NK90Z Datasheet - Page 5

• Manufacturer Part Number: STW12NK90Z
• Description: MOSFET N-CH 900V 11A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW12NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 880 mOhm @ 5.5, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.88 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4421-5

STW12NK90Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C
C
V
Symbol
Symbol
CASE
R
V
oss eq
(BR)DSS
g
increases from 0 to 80% V
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
(2)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
I
V
V
T
V
V
V
V
V
V
V
to 800V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 1mA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= max rating
= max rating,
= ± 20V
= V
= 10V, I
= 15V
= 25V, f = 1MHz,
= 0
= 0V, V
= 450V, I
= 720V, I
= 10V, R
Figure
Figure
GS
,
, I
I
GS
DS
D
13)
14)
D
GS
D
G
D
D
= 5.5A
= 5.5A
= 100µA
=0
= 0V
= 4.7Ω
= 5A
= 10V
= 10A,
Min.
Min.
900
3
Electrical characteristics
3500
Typ.
Typ.
3.75
0.72
280
117
113
11
58
31
20
88
55
19
60
oss
Max.
Max.
0.88
152
±10
4.5
50
1
when V
Unit
Unit
DS
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
µA
S
V
V
Ω
5/14