IXFV22N50P IXYS, IXFV22N50P Datasheet
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Manufacturer Part Number
IXFV22N50P
Description
MOSFET N-CH 500V 22A PLUS220
Specifications of IXFV22N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2630pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
PLUS-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
350000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2880
Qg, Typ, (nc)
50
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
350
Rthjc, Max, (ºc/w)
0.35
Package Style
PLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
PLUS220 & PLUS220SMD
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 2.5 mA
= 250 µA
, V
G
= 0.5 I
= 10 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFH 22N50P
IXFV 22N50P
IXFV 22N50PS
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
±40
750
350
150
300
260
22
55
22
30
10
6
4
±10
250
Max.
5.5
270 mΩ
5
V/ns
mJ
mJ
nA
µA
°C
°C
°C
°C
°C
µA
W
V
V
V
V
A
A
A
V
V
g
g
TO-247 AD (IXFH)
PLUS220 (IXFV)
PLUS220SMD (IXFV...S)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G
DS(on)
DSS
D
S
G
≤ ≤ ≤ ≤ ≤ 270 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200 ns
= 500
=
S
D = Drain
TAB = Drain
22
DS99358E(03/06)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXFV22N50P
IXFV22N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 22N50P IXFV 22N50P IXFV 22N50PS Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 750 ≤ DSS 350 -55 ... +150 150 -55 ... +150 ...
... A/µ 100V PLUS220SMD (IXFV...S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 20 ...
... Fig. 3. Output Characteristics @ 125 10V Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3.1 2 10V GS 2.5 2.2 1.9 1.6 1 Amperes D © 2006 IXYS All rights reserved º º C 3.1 2.8 2.5 2.2 6V 1.9 1.6 5V 1.3 0.7 0 º 125 º ...
... 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz C iss 1000 C oss 100 C rss Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 º 0.8 0.9 1 1.1 100 IXFH 22N50P IXFV 22N50P IXFV 22N50PS Fig. 8. Transconductance º ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 1 10 Pulse Width - milliseconds IXFH 22N50P IXFV 22N50P IXFV 22N50PS 100 1000 ...
Related keywords
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