IRFB4110PBF International Rectifier, IRFB4110PBF Datasheet - Page 7

• Manufacturer Part Number: IRFB4110PBF
• Description: MOSFET N-CH 100V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4110PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 9620pF @ 50V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 180 A
• Gate Charge, Total: 150 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 370 W
• Resistance, Drain To Source On: 3.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 78 ns
• Time, Turn-on Delay: 25 ns
• Transconductance, Forward: 160 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Mounting Style: Through Hole
• Gate Charge Qg: 150 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
Fig 21a. Unclamped Inductive Test Circuit
Fig 22a. Switching Time Test Circuit
Fig 23a. Gate Charge Test Circuit
0

‚
+
R
-
R G
20V
V
V DS
GS
D.U.T
Duty Factor < 0.1%
Pulse Width < 1µs
V
t p
1K
GS
Fig 20.
I AS
ƒ
D.U.T
V
+
-
•
•
•
•
DS
0.01 Ω
L
SD
DUT
•
•
•
D.U.T
L
L
15V
D
-
V
„
G
HEXFET
DRIVER
DD
+
-
+
-
+
V DD
VCC
V
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
90%
Fig 21b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 22b. Switching Time Waveforms
P.W.
SD
GS
= 5V for Logic Level Devices
DS
I
Fig 23b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
d(on)
Period
Body Diode Forward
Diode Recovery
Current
t
r
Qgd
dv/dt
Forward Drop
t p
di/dt
Qgodr
D =
t
d(off)
Period
P.W.
V
t
(BR)DSS
f
V
V
I
SD
GS
DD
Vgs
=10V
Id
7