IXFC16N50P IXYS, IXFC16N50P Datasheet
IXFC16N50P
Specifications of IXFC16N50P
Related parts for IXFC16N50P
IXFC16N50P Summary of contents
Page 1
... D = ± GSS DSS DS DSS (Note 1) DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFC 16N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 750 ≤ DSS 125 -55 ... +150 150 -55 ... +150 300 260 2500 11..65/2.5..15 ...
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... A, -di/dt = 100 A/µ 100 Note 1: Test Current IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min. Typ 2250 240 ...
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... DS(on) Junction Temperature 3 10V GS 2.8 2.5 2 16A D 1.9 1.6 1.3 1 0.7 0.4 -50 - Degrees Centigrade J Fig. 5. Maximum Drain Current v s. Case Temperature -50 - Degrees Centigrade J © 2006 IXYS All rights reserved 2.8 2.6 2.4 2 1.6 1.4 1.2 1 0.8 75 100 125 150 ...
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... Q - NanoCoulombs G Fig. 11. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25º 100 V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 0.3 10,000 1,000 100 10.00 25µs 1.00 100µs 1ms 10m 0.10 0.01 1000 0.0001 IXFC 16N50P Fig ...