IXTH200N10T IXYS, IXTH200N10T Datasheet - Page 3

• Manufacturer Part Number: IXTH200N10T
• Description: MOSFET N-CH 100V 200A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH200N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 550W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 200 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 76
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
200
180
160
140
120
100
200
180
160
140
120
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
V
0.1
0.2
GS
40
= 10V
0.2
0.4
15V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.3
80
- - - -
0.6
vs. Drain Current
0.4
Normalized to I
0.8
120
I
D
V
V
0.5
DS
- Amperes
V
@ 150ºC
DS
@ 25ºC
GS
1.0
- Volts
- Volts
= 10V
0.6
160
9V
8V
1.2
V
0.7
GS
200
7V
6V
5V
1.4
= 10V
0.8
D
9V
8V
= 100A Value
7V
6V
5V
1.6
0.9
240
T
T
J
J
1.8
= 25ºC
1.0
= 175ºC
280
2.0
1.1
320
1.2
2.2
350
300
250
200
150
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
90
80
70
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 4. R
Fig. 6. Drain Current vs. Case Temperature
V
V
GS
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
= 10V
9V
8V
1
DS(on)
0
0
vs. Junction Temperature
External Lead Current Limit
7V
6V
5V
T
T
J
C
- Degrees Centigrade
25
25
- Degrees Centigrade
2
Normalized to I
V
DS
@ 25ºC
50
50
- Volts
I
D
3
= 200A
75
75
IXTQ200N10T
IXTH200N10T
100
I
100
D
D
4
= 100A
= 100A Value
125
125
5
150
150
175
175
6