IRFS4010PBF International Rectifier, IRFS4010PBF Datasheet - Page 2

• Manufacturer Part Number: IRFS4010PBF
• Description: MOSFET N-CH 100V 180A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4010PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 215nC @ 10V
• Input Capacitance (ciss) @ Vds: 9575pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 375 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 143 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
DS(on)
GS(th)
G(int)
iss
oss
rss
oss
oss
SD
g
gs
gd
sync
rr
above this value .
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Symbol
Symbol
Symbol
temperature.
I
R
(BR)DSS
SD
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 106A, di/dt ≤ 1319A/µs, V
= 25Ω, I
/∆T
J
AS
J
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 106A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.057mH
Ù
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
g
J
- Q
≤ 175°C.
gd
)
g
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
…
†
‡
ˆ
‰
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
189
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
–––
mended footprint and soldering techniques refer to application note #AN-994.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
θJC
oss
θ
oss
oss
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
9575
1112
0.10
–––
–––
–––
–––
–––
–––
–––
143
100
660
270
757
–––
–––
–––
210
268
3.9
2.0
5.3
38
50
93
21
86
77
72
81
while V
DS
-100
–––
–––
250
100
–––
–––
215
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
720
–––
–––
–––
–––
–––
4.7
4.0
1.3
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
µA
nA
nC
nC
pF
ns
ns
V
V
Ω
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz See Fig.5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 106A
= 106A, V
= 106A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.7Ω
= 0V, I
= 10V, I
= V
= 100V, V
= 100V, V
= 20V
= -20V
= 25V, I
= 50V
= 10V
= 65V
= 10V
= 0V
= 50V
= 0V, V
= 0V, V
GS
, I
DSS
D
f
f
S
D
DS
DS
D
D
DS
= 250µA
DSS
= 106A, V
= 250µA
.
= 106A
= 106A
GS
GS
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
=0V, V
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 106A
D
= 85V,
f
GS
= 5mA
GS
J
= 10V
= 125°C
= 0V
g
www.irf.com
™
G
See Fig.11
f
f
S
D