IXFH26N50P IXYS, IXFH26N50P Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH26N50P
Manufacturer Part Number
IXFH26N50P
Description
MOSFET N-CH 500V 26A TO-247
Specifications of IXFH26N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
26 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
400000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
60
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
GSS
DSS
D25
DM
AR
GS(th)
© 2006 IXYS All rights reserved
DS(on)
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AR
AS
D
J
d
DSS
= 25 C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d
Test Conditions
T
T
Continuos
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
TO-247
PLUS220 & PLUS220SMD
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
TM
= 0 V, I
= V
= 30 V
= V
= 0 V
= 10 V, I
150 C, R
I
DM
, di/dt
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 A
= 4 mA
, V
= 0.5 I
G
100 A/ s, V
= 4
DS
= 0
D25
(TO-247)
(PLUS220)
GS
= 1 M
DD
T
J
= 125 C
V
DSS
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
JM
2 %
,
500
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
400
150
300
260
1.0
30
40
26
78
26
40
10
6
5
100
250
230
Max.
5.5
25
V/ns
N/lb
m
nA
mJ
W
V
V
A
A
C
C
C
C
C
V
V
V
V
A
A
A
g
g
J
PLUS220 (IXFV)
PLUS220SMD (IXFV_S)
G = Gate
S = Source
Features
l
l
l
l
Advantages
l
l
l
TO-247 (IXFH)
International standard packages
Fast intrinsic diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G
DS(on)
DSS
G
D
S
S
=
=
D = Drain
TAB = Drain
500
230 m
200 ns
26
DS99276E(12/05)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXFH26N50P
IXFH26N50P Summary of contents
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2006 IXYS All rights reserved IXFH 26N50P IXFV 26N50P IXFV 26N50PS Maximum Ratings 500 = 1 M 500 1 DSS 400 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 11..65/2.5.. Characteristic Values Min ...
... 100V PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test 16 ...
... Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 3.1 = 10V 2.8 7V 2.5 6V 2.2 1.9 1.6 1 0.7 0 -50 = 13A Value 125º 25º ...
... V - Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 10,000 MHz C iss 1,000 C oss 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.9 1 1.1 100 IXFH 26N50P ...
... IXYS All rights reserved IXFH 26N50P Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFV 26N50P IXFV 26N50PS 1 10 ...
Related keywords
ixfh26n5 ixfh26n50 ixfh24n50 ixfh21n50 ixfh20n60 ixfh26n50q ixfh26n60q ixfh26n60p ixfh26n50p ixfh20n80q IXFH26N50P datasheet IXFH26N50P data sheet IXFH26N50P pdf datasheet IXFH26N50P component IXFH26N50P part IXFH26N50P distributor IXFH26N50P RoHS IXFH26N50P datasheet download