STB21NK50Z STMicroelectronics, STB21NK50Z Datasheet - Page 4

MOSFET N-CH 500V 17A D2PAK

STB21NK50Z

Manufacturer Part Number
STB21NK50Z
Description
MOSFET N-CH 500V 17A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB21NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8767-2

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB21NK50Z
Manufacturer:
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Part Number:
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Quantity:
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Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
= 25 °C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
(see Figure 15)
I
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
= 1mA, V
=0, V
=400 V, I
= V
= 10 V, I
= 25 V, f=1 MHz, V
=10 V
= Max rating,
= Max rating @125 °C
= ±20 V
Test conditions
Test conditions
GS
DS
, I
GS
D
=0 to 400 V
D
D
= 8.5 A
= 100 µA
= 0
= 17 A
GS
=0
Min.
500
3
Min. Typ. Max.
Typ.
3.75
0.23
2600
15.5
328
187
72
85
42
oss
STB21NK50Z
Max.
when V
0.27
119
±
4.5
50
10
1
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
µA
V
V

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