STB300NH02L STMicroelectronics, STB300NH02L Datasheet - Page 4
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STB300NH02L
Manufacturer Part Number
STB300NH02L
Description
MOSFET N-CH 24V 120A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP300NH02L.pdf
(14 pages)
Specifications of STB300NH02L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
109.4nC @ 10V
Input Capacitance (ciss) @ Vds
7055pF @ 15V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source Voltage Vds
24V
On Resistance Rds(on)
1.4mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0018 Ohms
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7945-2
STB300NH02L
STB300NH02L
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB300NH02L
Manufacturer:
ST
Quantity:
12 500
Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
R
CASE
V
(BR)DSS
C
I
I
DS(on)
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
Q
oss
rss
iss
gs
gd
G
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
GS
DS
= 0)
= 0)
V
V
V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
I
V
V
V
V
V
V
@100°C
D
DS
DD
GS
GS
GS
DS
DS
DS
DS
= 1mA, V
Test conditions
= 12V,I
= 10V
= V
= 10V, I
= 10V, I
= 20V,
= 20V, T
= ±20V
= 15V, f = 1 MHz, V
GS
Test conditions
, I
D
D
D
GS
D
= 120A,
c
= 80A
= 80A
= 250µA
=125°C
= 0
GS
TO-220
D²PAK
TO-220
D²PAK
STB300NH02L - STP300NH02L
=0
Min.
Min.
24
1
109.4
7055
3251
Typ.
Typ.
30.2
26.4
307
1.8
1.4
2.7
2.1
4.4
Max.
±100
Max. Unit
2.2
1.8
10
1
2
Unit
mΩ
mΩ
mΩ
mΩ
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω