STW20NM50 STMicroelectronics, STW20NM50 Datasheet - Page 2

• Manufacturer Part Number: STW20NM50
• Description: MOSFET N-CH 550V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW20NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3262-5

STW20NM50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
2/8
C
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
oss eq.
R
V
(BR)DSS
g
I
C
I
E
GS(th)
DS(on)
C
C
fs
I
DSS
GSS
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
R
AR
T
oss
AS
iss
rss
(1)
G
l
V
DSS
oss eq.
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
Forward Transconductance V
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
Parameter
= 5 A, V
j
max)
I
V
V
V
V
D
DS
DS
GS
DS
GS
= 250 µA, V
CASE
I
V
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
D
= Max Rating, T
= Max Rating
= ±30V
= V
= 10V, I
DD
DS
GS
DS
= 10A
Test Conditions
Test Conditions
GS
= 35 V)
> I
= 0V, V
= 25V, f = 1 MHz, V
= 25 °C UNLESS OTHERWISE SPECIFIED)
, I
Test Conditions
D(on)
D
D
= 10A
GS
= 250µA
DS
x R
= 0
= 0V to 400V
DS(on)max,
C
= 125 °C
Max
Max
GS
= 0
Min.
Min.
500
3
Min.
Max Value
oss
0.585
300
650
30
10
when V
1480
Typ.
Typ.
Typ.
0.20
285
130
1.6
10
34
4
DS
increases from 0 to 80%
Max.
Max.
0.25
Max.
±100
100
5
1
°C/W
°C/W
Unit
Unit
Unit
Unit
pF
pF
pF
pF
mJ
µA
µA
nA
°C
V
S
A
V