STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 14
STP11NM80
Manufacturer Part Number
STP11NM80
Description
MOSFET N-CH 800V 11A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STP11NM80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
43.6nC @ 10V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
11A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4369-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
12 000
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
14/17
Dim
A1
D1
E1
V2
b2
c2
e1
J1
L1
L2
A
D
E
H
R
b
c
e
L
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
Doc ID 9241 Rev 10
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
0.016
inch
Typ
0.1
STB/F/P/W11NM80
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.624
0.106
0.110
0.055
0.069
Max
8°