STP20NM60FP STMicroelectronics, STP20NM60FP Datasheet - Page 3

• Manufacturer Part Number: STP20NM60FP
• Description: MOSFET N-CH 600V 20A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM60FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2771-5

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
I
SD
P
DM
V
E
V
V
T
I
T
AS
I
I
TOT
T
ISO
AS
DS
GS
stg
D
D
< 20A, di/dt < 400A/µs, V
l
j
(2)
(3)
Absolute maximum ratings
Thermal resistance
Avalanche data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
Storage temperature
Max. operating junction temperature
C
=25°C)
j
= 25 °C, I
DD
Parameter
Parameter
Parameter
< V
D
C
(BR)/DSS
= I
= 25°C
GS
AS
= 0)
, V
, Tj < T
DD
C
C
= 25°C
= 100°C
= 50 V)
j
max)
JMAX
TO-220/D²PAK
TO-220/D²PAK
I²PAK/TO-247
I²PAK/TO-247
12.6
192
0.65
1.5
20
80
--
Max. value
-65 to 150
Value
62.5
±30
300
600
150
650
15
10
TO-220FP
TO-220FP
Electrical ratings
12.6
20
80
2500
0.36
45
2.8
(1)
(1)
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
A
A
A
V
A
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